Discover the RUM002N05T2L: Ideal for High Performance N-Channel MOSFETs

Choosing the right components is crucial in modern electronic design, especially in the areas of power management and signal processing, and the RUM002N05T2L N-channel MOSFET from ROHM is the preferred choice of many engineers due to its excellent performance and compact design. In this article, we will discuss the basic information, technical advantages and application areas of this product.

Basic Information

The RUM002N05T2L is an N-channel MOSFET designed for high performance and low power applications. The following are some key parameters of this product:

- Maximum drain-source voltage (VDS): 50V

- Maximum drain current (ID): 200mA

- On-resistance (RDS(on)):

- Approximately 2.4Ω at VGS = 1.2V

- Approx. 2.4Ω at VGS = 1.2V Approx. 1.7Ω at VGS = 2.5V

- Approx. 1.6Ω at VGS = 4.5V

- Package type: SOT-723 (VMT3), compact size for space-constrained applications

- Power consumption: 150mW max.

- Operating temperature range: -55°C to +150°C

Technical Advantages

Excellent on-state performance

The on-resistance of the RUM002N05T2L is exceptional for its class, especially in low-voltage drive. This allows it to effectively reduce power consumption and improve overall system efficiency in applications with high switching frequencies.

Miniaturised design

Available in a SOT-723 package, the RUM002N05T2L is very small, making it ideal for use in portable devices and compact electronics. The miniaturisation feature of this MOSFET is particularly important as electronic devices move towards miniaturisation and lightweighting.

Wide-ranging applicability

The RUM002N05T2L can be used in a wide range of applications, including:

- Consumer electronics: power switching and signal amplification in devices such as smartphones and tablets.

- Automotive electronics: for power management systems in in-vehicle equipment to ensure stable and reliable performance.

- Industrial control: used as switching elements in automation equipment to effectively manage dynamic loads and improve system response speed.

Application Examples

In practical applications, the RUM002N05T2L is widely used as a power management module in smartphones, where its high-efficiency switching function effectively extends the battery life of the device. In addition, in the field of automotive electronics, it is also used to control functions such as on-board LED lighting and power windows, enhancing the intelligence of vehicles.

Summary

The RUM002N05T2L is a high-quality N-channel MOSFET that combines high performance, miniaturisation, and a wide range of applications, and plays an important role in modern electronic design thanks to its excellent on-state performance and reliability. Whether in consumer electronics, automotive electronics or industrial control, this MOSFET delivers outstanding performance and is an indispensable choice for design engineers.

In addition, as a leading distributor of electronic semiconductors, UCC INDU GmbH is committed to providing customers with comprehensive technical support and quality service. UCC INDU GmbH has extensive industry experience and a dedicated team of professionals to provide customers with a range of product solutions, including the RUM002N05T2L, to help customers achieve more efficient and reliable power electronic system design. RUM002N05T2L For more information or technical support, please contact our team.

Disclaimer: The information provided on this page is for informational purposes only. We do not warrant the accuracy or completeness of the information and accept no liability for any loss or damage arising from the use of such information.