Recommended by Star Semiconductor - P6 SiC MOSFET: Built for Efficient Energy Conversion

The P6 SiC MOSFET power module is a high-performance power module introduced by Star Semiconductor, which has demonstrated excellent performance in a number of fields, especially in applications such as electric vehicles, industrial power electronics and renewable energy sources, with wide applicability.

Product Description

The P6 SiC MOSFET power modules are available in two voltage classes, 1200V and 750V, with RDS(on) values of 2.9mΩ and 2.2mΩ for the 1200V module, and 1.7mΩ and 1.3mΩ for the 750V module. These modules are designed with multiple SiC chips in parallel, with series gate resistors to ensure current balance between the chips. The modules are designed with multiple SiC chips in parallel, with gate resistors connected in series to ensure that the current is balanced across the chips. To avoid oscillation, the modules are designed with low inductance to ensure system stability. In terms of output current, the 1200V module has an output current range of 480A to 640A, while the 750V module has an output current range of 485A to 630A. In terms of the manufacturing process, the SiC chips use double-sided silver paste sintering and copper wire bonding, which not only improves the reliability of the connection, but also optimises the electrical performance. In addition, the module uses silicon nitride (Si3N4) as the insulating substrate and is equipped with a PINFIN heat sink, which ensures excellent heat dissipation and effectively reduces the operating temperature. Notably, the module has passed the 175°C AQG-324 reliability certification and is capable of long-term stable operation in a junction temperature environment of up to 175°C.

Application Scenarios for P6 SiC MOSFET Power Modules

In the field of electric vehicles, P6 SiC MOSFET modules are widely used in main drive inverters, on-board chargers and DC/DC converters. Their high efficiency enables the DC power from the battery to be efficiently converted into the AC power required by the motor, thus increasing the range. At the same time, the high-temperature resistance of SiC materials allows these modules to operate stably in extreme environments, adapting to the high-temperature operation requirements of electric vehicles. In addition, the high power density design of SiC MOSFETs allows for significant reductions in module size and weight, contributing to the lightweight design of electric vehicles.

In industrial power electronics applications, P6 SiC MOSFET modules are used in high-efficiency switching power supplies, inverters and frequency converters. These modules support high switching frequencies to effectively control motor starting, stopping and speed regulation, thereby improving system efficiency and stability. The low inductance design of the modules effectively avoids oscillation problems and ensures system reliability for a wide range of industrial equipment.

In renewable energy, P6 SiC MOSFET modules play an important role in solar inverters and wind power converters. Their low energy loss characteristics enable a significant increase in power conversion efficiency, effectively converting solar and wind energy into usable power. This not only improves the overall efficiency of renewable energy systems, but also promotes environmentally friendly and sustainable development.

Summary

In summary, the P6 SiC MOSFET power module, with its high efficiency, high temperature resistance and low loss advantages, has become an indispensable and important component in the fields of electric vehicles, industrial power electronics and renewable energy, driving the progress and application of modern power electronics technology.

As a leading power semiconductor solution provider, STARPOWER focuses on the research, development, production and sales of IGBT and SiC modules. Since its establishment in 2005, STAR Semiconductor has rapidly grown into an industry leader with its excellent technical strength and innovation capability. Our products are widely used in new energy vehicles, industrial control, new energy and other fields, and are committed to promoting the improvement of global energy efficiency.

Frequently asked questions and answers about P6 SiC MOSFET power modules are as follows:

1.What do I need to pay attention to when using multiple SiC MOSFETs in parallel?

Sufficient voltage decoupling needs to be considered to prevent thermal runaway

Switching timing must be matched to prevent damage due to breakdown voltage

Low threshold voltage tolerance helps to achieve highly symmetrical switching behaviour

2.What are the gate signal inductance requirements for SiC MOSFETs?

Although there is no specific guideline, the length of the wiring from the device gate terminals to the PC terminals of the gate driver circuit has the greatest impact

The wiring inductance from the device source pins to the board ground pattern also needs to be considered

3.What are the characteristics of the gate charge parameters of SiC MOSFETs?

Low gate charge (QG) reduces switching losses and gate drive power consumption

The ratio of leakage gate charge (QGD) to gate source charge (QGS) is also important, and QGD should be lower than QGS to ensure stability.

4.What are the characteristics of the forward voltage drop of a SiC MOSFET?

The bandgap of SiC is 3 times that of Si, resulting in an approximate 3V increase in the rise voltage of the pn diode

However, in bridge circuits, substantial steady state losses should not be an issue since a gate ON signal can be input at the time of commutation

5.What are the changes in using SiC MOSFETs compared to Si IGBTs?

High-frequency operation, reduction of device size and weight, and improvement of power conversion efficiency can be achieved

65% reduction in turn-off loss and turn-on loss, respectively

No external diode is required, which reduces parasitic inductance and improves reliability.

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